MJD340T4G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
MJD340T4G
|
|
حجم فایل
|
82.739
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi MJD340RLG
-
Transistor Type:
NPN
-
Operating Temperature:
-65°C~+150°C@(Tj)
-
Collector Current (Ic):
500mA
-
Power Dissipation (Pd):
15W
-
Transition Frequency (fT):
10MHz
-
DC Current Gain (hFE@Ic,Vce):
30@50mA,10V
-
Collector Cut-Off Current (Icbo):
100uA
-
Collector-Emitter Breakdown Voltage (Vceo):
300V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1V@100mA,10mA
-
Package:
TO-252
-
Manufacturer:
onsemi